(China (Mainland))
Product Summary
The K4M51163LC-BG75 is a 536,870,912 bits synchronous high data rate Dynamic RAM. It is fabricated with SAMSUNG’s high performance CMOS technology.
Parametrics
Absolute maximum ratings: (1)Voltage on any pin relative to Vss:-1.0V to 3.6V; (2)Voltage on VDD supply relative to Vss:-1.0V to 3.6V; (3)Storage temperature:-55℃ to +150℃; (4)Power dissipation:1.0W; (5)Short circuit current:50mA.
Features
Features: (1)VDD/VDDQ = 2.5V/2.5V; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system clock; (7)Burst read single-bit write operation; (8)Special Function Support; (9)DQM for masking; (10)Auto refresh; (11)64ms refresh period (8K cycle).
Diagrams
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 K4M51163LE-Y(P)C/L/F |
Other |
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Data Sheet |
Negotiable |
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K4M513233E-M(E)C/L/F |
Other |
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Data Sheet |
Negotiable |
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K4M51323LE-M(E)C/L/F |
Other |
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Data Sheet |
Negotiable |
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K4M56163PE-R(B)G/F |
Other |
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Data Sheet |
Negotiable |
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K4M563233D-M(E)E/N/I/P |
Other |
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Data Sheet |
Negotiable |
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K4M56323LE |
Other |
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Data Sheet |
Negotiable |
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